2N3737
TRANS NPN 40V 1.5A TO46-3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3737 is an NPN bipolar junction transistor designed for robust performance. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 1.5A. With a specified minimum DC current gain (hFE) of 20 at 1A and 1.5V, it offers reliable amplification characteristics. The saturation voltage (Vce(sat)) is a maximum of 900mV at 100mA collector current and a 1A base current. The transistor is housed in a TO-46-3 metal can package, suitable for through-hole mounting. It is rated for a maximum power dissipation of 500mW and operates within a temperature range of -65°C to 200°C. This device finds application in various industrial and consumer electronics requiring general-purpose switching and amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
