2N3716
NPN POWER SILICON TRANSISTORSManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's NPN power bipolar junction transistor, part number 2N3716, is designed for demanding applications. This through-hole device features a maximum collector current of 10A and a collector-emitter breakdown voltage of 80V. The transistor offers a power dissipation of 5W and a minimum DC current gain (hFE) of 50 at 1A and 2V. Its saturation voltage (Vce(sat)) is specified at a maximum of 2.5V at 2A collector current and sufficient base drive. Encased in a TO-204AD (TO-3) package, this component is suitable for operation across a wide temperature range of -65°C to 200°C. The 2N3716 is commonly utilized in power switching and amplification circuits within industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
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