2N3715
TRANS NPN 60V 10A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3715 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-3 package (TO-204AA), offers a continuous collector current (Ic) capability of up to 10 A and a collector-emitter breakdown voltage (Vce(max)) of 60 V. With a maximum power dissipation of 5 W and a junction temperature range of -65°C to 200°C, it is suitable for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 50 at 1 A and 2 V. Saturation voltage (Vce(sat)) is specified at a maximum of 2.5 V for 2 A base current driving 10 A collector current. This transistor finds utility in industrial power control, audio amplification, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
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