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2N3700UB

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2N3700UB

TRANS NPN 80V 1A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N3700UB is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 500mW, it is designed for surface mount applications in the UB package. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 500mA and 10V, and a saturation voltage (Vce(sat)) of 500mV at 50mA/500mA. The collector cutoff current is specified at a maximum of 10nA. This transistor is suitable for use in various industrial and consumer electronics applications requiring robust switching and amplification capabilities. It operates within a temperature range of -65°C to 200°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW

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