2N3700UB
TRANS NPN 80V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3700UB is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 500mW, it is designed for surface mount applications in the UB package. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 500mA and 10V, and a saturation voltage (Vce(sat)) of 500mV at 50mA/500mA. The collector cutoff current is specified at a maximum of 10nA. This transistor is suitable for use in various industrial and consumer electronics applications requiring robust switching and amplification capabilities. It operates within a temperature range of -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
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