2N3637UB/TR
TRANS PNP 175V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3637UB-TR is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 175V and a continuous collector current capability of 1A, with a maximum power dissipation of 1.5W. The specified DC current gain (hFE) is a minimum of 100 at 50mA collector current and 10V collector-emitter voltage. It exhibits a Vce(sat) of 600mV at 5mA base current and 50mA collector current. The device operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a UB (3-SMD, No Lead) configuration for surface mounting and supplied on tape and reel (TR), this transistor is suitable for use in industrial and aerospace applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1.5 W |
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