2N3635UB
TRANS PNP 140V 1A 3SMDManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3635UB is a PNP bipolar junction transistor designed for high-reliability applications. This component features a maximum collector current (Ic) of 1 A and a collector-emitter breakdown voltage (Vce) of 140 V. With a power dissipation capability of 1.5 W and a minimum DC current gain (hFE) of 100 at 50mA and 10V, it offers robust performance. The transistor exhibits a Vce(sat) of 600mV at 5mA/50mA, ensuring efficient switching. Operating across a wide temperature range from -65°C to 200°C (TJ), the 2N3635UB is suitable for demanding environments. Its 3-SMD, No Lead package (UB) facilitates surface mounting. This device finds application in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1.5 W |
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