2N3634UB
TRANS PNP 140V 1A 3SMDManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3634UB is a PNP bipolar junction transistor (BJT) designed for high-reliability applications requiring robust performance. This device features a 140V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic(max)) of 1A. With a maximum power dissipation of 1W and a wide operating temperature range of -65°C to 200°C (TJ), the 2N3634UB is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 50mA and 10V, and a collector cutoff current (Ic(max)) of 10µA. The saturation voltage (Vce(sat)(max)) is 600mV at 5mA base current and 50mA collector current. This transistor is provided in a 3-SMD, No Lead package (UB) for surface mounting and is available in bulk packaging. The 2N3634UB finds application in power switching and general-purpose amplification within industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
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