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2N3629

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2N3629

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N3629 is a PNP bipolar junction transistor (BJT) designed for power applications. This component offers a 40 V collector-emitter breakdown voltage and a continuous collector current capability of 5 A, with a maximum power dissipation of 30 W. The 2N3629 features a stud mount configuration, compatible with TO-61, TO-211MA, and TO-210AC package types. Its robust construction makes it suitable for demanding applications within industrial automation, power control, and general-purpose switching circuits. The device is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-211MA, TO-210AC, TO-61-4, Stud
Mounting TypeStud Mount
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-61
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max30 W

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