2N3598
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology 2N3598 is a high-power PNP bipolar junction transistor (BJT) housed in a TO-63 stud mount package. This device is engineered for demanding applications requiring significant current handling capabilities, featuring a maximum collector current (Ic) of 20 A and a maximum power dissipation of 100 W. The transistor exhibits a collector-emitter breakdown voltage (Vce) of 60 V, making it suitable for power switching and amplification circuits. Its robust construction and stud mount design facilitate efficient thermal management in power supply units, motor control systems, and industrial automation equipment. This component is a reliable choice for designers needing a dependable power transistor for rugged environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 100 W |
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