2N3597
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3597 is a high-power PNP bipolar junction transistor (BJT) featuring a robust TO-63 stud mount package. This component is designed for demanding applications requiring significant current handling capabilities, with a maximum collector current (Ic) of 20 A and a power dissipation rating of 100 W. The collector-emitter breakdown voltage (Vce) is specified at 40 V. Its stud mount configuration ensures efficient thermal management, making it suitable for power switching and amplification circuits in industrial control, power supplies, and audio amplification systems. The 2N3597 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 100 W |
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