2N3585P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3585P is a high-voltage NPN bipolar junction transistor designed for power applications. This component features a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 2A, with a maximum power dissipation of 2.5W. It offers a DC current gain (hFE) of a minimum of 40 at 100mA and 10V, and a saturation voltage (Vce Sat) of 750mV at 125mA and 1A. The 2N3585P is housed in a TO-66 (TO-213AA) through-hole package, ensuring robust mounting and thermal performance. Its operating junction temperature range is -65°C to 200°C. This device is suitable for use in power switching and linear amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
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