2N3507AU4
TRANS NPN 50V 3A U4Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3507AU4 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount device, specified in the U4 package, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 30 at 1.5A and 2V, it provides robust amplification and switching characteristics. The operating temperature range of -65°C to 200°C (TJ) and MIL-PRF-19500/349 qualification highlight its suitability for military and high-reliability systems. This component finds utility in power switching, amplification, and control circuits across various industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | U4 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/349 |
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