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2N3507

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2N3507

NPN POWER SILICON TRANSISTORS

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 50 V 3 A 1 W Through Hole TO-39

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 500mA, 1V
Frequency - Transition-
Supplier Device PackageTO-39
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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