2N3499UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3499UB-TR is an NPN bipolar junction transistor (BJT) designed for small-signal applications. This surface-mount device, supplied in a UB package on tape and reel, offers a collector-emitter breakdown voltage of 100V and a maximum collector current of 500mA. It features a maximum power dissipation of 1W and a low collector cutoff current of 10µA (ICBO). With a minimum DC current gain (hFE) of 100 at 150mA and 10V, the 2N3499UB-TR provides reliable amplification. The saturation voltage at 30mA base current and 300mA collector current is 600mV. This component operates across a wide temperature range of -65°C to 200°C. It finds application in general-purpose amplification and switching circuits across various electronic industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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