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2N3499UB/TR

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2N3499UB/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N3499UB-TR is an NPN bipolar junction transistor (BJT) designed for small-signal applications. This surface-mount device, supplied in a UB package on tape and reel, offers a collector-emitter breakdown voltage of 100V and a maximum collector current of 500mA. It features a maximum power dissipation of 1W and a low collector cutoff current of 10µA (ICBO). With a minimum DC current gain (hFE) of 100 at 150mA and 10V, the 2N3499UB-TR provides reliable amplification. The saturation voltage at 30mA base current and 300mA collector current is 600mV. This component operates across a wide temperature range of -65°C to 200°C. It finds application in general-purpose amplification and switching circuits across various electronic industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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