2N3498
TRANS NPN 100V 0.5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3498 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 100V and a continuous collector current (Ic) capability of 500mA. With a maximum power dissipation of 1W and a junction temperature range of -65°C to 200°C, it is suitable for demanding environments. The minimum DC current gain (hFE) is 40 at 150mA and 10V. The transistor exhibits a Vce(sat) of 600mV at 30mA and 300mA. Packaged in a TO-39 (TO-205AD) metal can, the 2N3498 is commonly employed in industrial control, power supply regulation, and audio amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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