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2N3491

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2N3491

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N3491 is an NPN bipolar junction transistor (BJT) designed for demanding power applications. This stud-mount device, housed in a TO-61 package, offers a robust 80 V collector-emitter breakdown voltage and a continuous collector current capability of 7 A, supporting a maximum power dissipation of 115 W. Its thermal characteristics are further defined by an operating temperature range of -65°C to 200°C (TJ). The 2N3491 is suitable for use in various industrial and power control systems where reliable high-current switching and amplification are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-211MA, TO-210AC, TO-61-4, Stud
Mounting TypeStud Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-61
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max115 W

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