2N3491
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3491 is an NPN bipolar junction transistor (BJT) designed for demanding power applications. This stud-mount device, housed in a TO-61 package, offers a robust 80 V collector-emitter breakdown voltage and a continuous collector current capability of 7 A, supporting a maximum power dissipation of 115 W. Its thermal characteristics are further defined by an operating temperature range of -65°C to 200°C (TJ). The 2N3491 is suitable for use in various industrial and power control systems where reliable high-current switching and amplification are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 115 W |