2N3490
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3490 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, packaged in a TO-61 case, offers a collector current capability of up to 7 A and a maximum power dissipation of 115 W. With a collector-emitter breakdown voltage of 60 V, the 2N3490 is suitable for power switching and amplification tasks in industrial control systems, power supplies, and automotive electronics. Its wide operating temperature range of -65°C to 200°C ensures reliable performance in harsh environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 115 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
2N5632
POWER BJT
