2N3487
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3487 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 60 V collector-emitter breakdown voltage and a maximum collector current of 7.5 A, enabling it to handle significant power dissipation up to 115 W. The 2N3487 is housed in a TO-61 stud mount package, facilitating robust thermal management and ease of integration into power circuitry. Its robust construction makes it suitable for use in industrial power control systems and high-current switching applications. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 7.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 115 W |
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