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2N3448

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2N3448

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N3448 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 80 V and can handle a continuous collector current of up to 7 A. With a maximum power dissipation of 115 W, it is suitable for demanding switching and amplification tasks. The 2N3448 is packaged in a TO-204AD (TO-3) metal can, facilitating efficient heat sinking and through-hole mounting. Its operating temperature range extends from -65°C to 200°C (TJ). This robust power BJT finds application in industrial power supplies, motor control, and audio amplification circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 500µA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max115 W

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