2N3447
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3447 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a collector current rating of 7 A and a maximum power dissipation of 115 W, making it suitable for power switching and amplification circuits. The 2N3447 operates with a collector-emitter breakdown voltage of 60 V and has a saturation voltage of 1.5V at 500µA collector current and 500µA base current. Packaged in a TO-204AD (TO-3) through-hole configuration, this transistor is engineered for robust thermal performance across an operating temperature range of -65°C to 200°C. The 2N3447 is commonly utilized in industrial power control, automotive systems, and high-fidelity audio amplifiers.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500µA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 115 W |