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2N3446

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2N3446

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology 2N3446 is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 7.5 A. With a power dissipation rating of 115 W, it is suitable for demanding power management tasks. The TO-204AD (TO-3) package facilitates efficient heat dissipation, making it ideal for use in industrial control, power supplies, and audio amplification systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)7.5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max115 W

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