2N3442
NPN POWER SILICON TRANSISTORSManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3442 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector-emitter breakdown voltage of 140V and a maximum continuous collector current of 10A. With a power dissipation rating of 6W, it is suitable for demanding tasks. Key electrical parameters include a minimum DC current gain (hFE) of 20 at 3A/4V and a saturation voltage (Vce(sat)) of 1V at 300mA/3A. The device operates across a wide temperature range of -55°C to 200°C. This transistor is commonly utilized in power switching and amplification circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 6 W |
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