2N3439L
TRANS NPN 350V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3439L is a general-purpose NPN bipolar junction transistor. This device offers a collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW, it is packaged in a TO-5 metal can (TO-205AA) for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage, and a Vce(sat) of 500mV at 4mA base current and 50mA collector current. The collector cutoff current is specified at a maximum of 2µA. This component finds application in power switching and amplifier circuits across various industrial sectors. It operates within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |