2N2991
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N2991 is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector current capability of up to 1 A and a maximum power dissipation of 5 W. The 2N2991 features a collector-emitter breakdown voltage of 80 V, making it suitable for use in power switching and amplifier circuits within industrial and automotive sectors. Its operating temperature range extends from -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 50µA, 200µA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
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