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2N2907AUB/TR

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2N2907AUB/TR

TRANS PNP 60V 0.6A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N2907AUB-TR is a PNP bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA, with a maximum power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 100 at 1mA collector current and 10V Vce. Key parameters include a collector cutoff current of 50nA and a Vce(sat) of 1.6V at 50mA base current and 500mA collector current. The 2N2907AUB-TR is supplied in a UB package, utilizing Tape & Reel (TR) packaging, and operates across a temperature range of -65°C to 200°C. This transistor finds utility in various industrial and consumer electronics applications requiring general-purpose amplification and switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW

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