2N2907AUB/TR
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N2907AUB-TR is a PNP bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA, with a maximum power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 100 at 1mA collector current and 10V Vce. Key parameters include a collector cutoff current of 50nA and a Vce(sat) of 1.6V at 50mA base current and 500mA collector current. The 2N2907AUB-TR is supplied in a UB package, utilizing Tape & Reel (TR) packaging, and operates across a temperature range of -65°C to 200°C. This transistor finds utility in various industrial and consumer electronics applications requiring general-purpose amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
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