2N2879
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N2879 is an NPN power bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, housed in a TO-111 package, offers a robust 80V collector-emitter breakdown voltage and a continuous collector current capability of 5A. Dissipating up to 30W, it is suitable for high-power switching and amplification circuits. The 2N2879 features a typical saturation voltage of 250mV at 100µA base current and 1mA collector current. Its wide operating temperature range of -65°C to 200°C makes it a reliable choice for industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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