2N2780
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology PNP Bipolar Junction Transistor (BJT), part number 2N2780. This high-power device features a 300 V collector-emitter breakdown voltage and a maximum collector current of 30 A. Rated for 200 W power dissipation, it is designed for stud mounting in a TO-63 package. The operating temperature range is -65°C to 200°C (TJ). This component is utilized in demanding applications across industrial power control and high-voltage switching systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 200 W |
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