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2N2369AUBC/TR

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2N2369AUBC/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Leverage the Microchip Technology 2N2369AUBC-TR, an NPN bipolar junction transistor designed for demanding applications. This surface-mount device, packaged in a 3-SMD, No Lead UBC configuration on tape and reel, offers a 15V collector-emitter breakdown voltage. With a maximum power dissipation of 360mW and an operating junction temperature range of -65°C to 200°C, it is suitable for environments requiring robust performance. Key electrical characteristics include a maximum collector cutoff current of 400nA and a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage. The Vce(sat) is specified at a maximum of 450mV for a base current of 10mA driving a collector current of 100mA. This component is commonly utilized in industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageUBC
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW

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