2N2369AUBC
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology NPN Bipolar Junction Transistor (BJT), part number 2N2369AUBC. This surface-mount device, packaged in a 3-SMD, No Lead UBC configuration, offers a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 360 mW. It features a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage. The collector cutoff current is rated at a maximum of 400nA. The Vce(sat) is a maximum of 450mV at 10mA base current and 100mA collector current. This component is suitable for applications in consumer electronics and industrial control systems, operating within a temperature range of -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |