2N2369AUB
TRANS NPN 20V SMDManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N2369AUB is an NPN bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 20V and a maximum power dissipation of 360mW. With a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, it offers consistent amplification characteristics. The saturation voltage (Vce(sat)) is specified at a maximum of 450mV for a base current of 10mA driving a collector current of 100mA. The collector cutoff current is a low 400nA. This transistor is suitable for use in industrial and commercial electronics, including switching and amplification circuits. It is supplied in UB package, 3-SMD, No Lead, and available in bulk packaging. The operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 360 mW |