2N2222AUBC
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology NPN Bipolar Junction Transistor (BJT), part number 2N2222AUBC, is a surface-mount device designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. The maximum power dissipation is rated at 500mW. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 1V at 50mA base current and 500mA collector current. This device is suitable for operation across a wide temperature range of -65°C to 200°C. The UBC package, a 3-SMD, No Lead configuration, is supplied in bulk packaging. Applications include consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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