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2N2219AL

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2N2219AL

TRANS NPN 50V 0.8A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology 2N2219AL is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-39 (TO-205AD) metal can package. This component offers a collector-emitter breakdown voltage of up to 50V and a continuous collector current capability of 800mA. The device features a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. Collector cutoff current is specified at a maximum of 10nA. Vce saturation is rated at 1V maximum for a base current of 50mA and a collector current of 500mA. The operating temperature range for the 2N2219AL is -55°C to 200°C. This transistor finds application in various industrial and consumer electronics, including switching and amplification circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW

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