2N2219AL
TRANS NPN 50V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N2219AL is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-39 (TO-205AD) metal can package. This component offers a collector-emitter breakdown voltage of up to 50V and a continuous collector current capability of 800mA. The device features a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. Collector cutoff current is specified at a maximum of 10nA. Vce saturation is rated at 1V maximum for a base current of 50mA and a collector current of 500mA. The operating temperature range for the 2N2219AL is -55°C to 200°C. This transistor finds application in various industrial and consumer electronics, including switching and amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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