2N2219
TRANS NPN 30V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N2219 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vce) of 30 V. The device offers a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. With a maximum power dissipation of 800 mW, it is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The 2N2219 is utilized across various industries including industrial control, telecommunications, and consumer electronics. Its operating temperature range is from -55°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
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