2N2218
TRANS NPN 30V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N2218 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a power dissipation of 800mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V, it offers robust performance. The transistor operates across a wide temperature range from -55°C to 200°C and is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. Applications for this device include industrial control systems and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |