2N1725
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1725 is an NPN bipolar junction transistor (BJT) designed for robust power amplification and switching applications. This stud-mount device features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 5A, with a maximum power dissipation of 3W. The 2N1725 exhibits a minimum DC current gain (hFE) of 50 at 2A and 15V, and a saturation voltage (Vce(sat)) of 1V at 500mA collector current. Its TO-61 stud mount package is suitable for thermal management in demanding environments. This component finds application in power control circuits, industrial automation, and general-purpose power switching within various electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2A, 15V |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 3 W |
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