2N1724
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1724 is an NPN bipolar junction transistor (BJT) designed for power applications. This stud-mount device, housed in a TO-61 package, offers a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 5 A. With a power dissipation rating of 3 W and a minimum DC current gain (hFE) of 30 at 2 A and 15 V, the 2N1724 is suitable for power switching and amplification circuits. It features a Vce(sat) of 600 mV at 200 mA/2 A and a collector cutoff current of 300 µA, operating within a temperature range of -65°C to 175°C. This component finds application in industrial and consumer electronics requiring robust power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 15V |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 3 W |
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