2N1613A
TRANS NPN 30V 0.5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1613A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This TO-5 packaged device features a collector-emitter breakdown voltage (Vce) of 30V and a maximum continuous collector current (Ic) of 500mA. With a power dissipation rating of 800mW, it offers a DC current gain (hFE) of at least 40 at 150mA and 10V. The transistor exhibits a Vce(sat) of 1.5V at 15mA base current and 150mA collector current. It operates across a wide temperature range from -65°C to 200°C. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
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