2N1506
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1506 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component, packaged in a TO-205AA (TO-5-3 Metal Can), supports a maximum collector current of 500 mA and dissipates up to 3 W. The device features a collector-emitter breakdown voltage of 40 V. The 2N1506 is suitable for use in general-purpose power switching and amplification circuits, finding application in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50µA, 100µA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 3 W |
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