2N1490
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1490 is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, offers a collector current capability of 6A and a maximum power dissipation of 75W. The device features a collector-emitter breakdown voltage of 55V and a saturation voltage of 3V at 300mA base current and 1.5A collector current. Its DC current gain (hFE) is a minimum of 25 at 1.5A collector current and 4V collector-emitter voltage. The operating temperature range is from -65°C to 200°C. This component finds application in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1.5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 75 W |
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