2N1489
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1489 is an NPN bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 6A. With a power dissipation capability of 75W and a low saturation voltage of 3V at 1.5A collector current and 300mA base current, it is suitable for demanding power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 25 at 1.5A and 4V. Operating temperature ranges from -65°C to 200°C. This component finds application in industrial power supplies and general-purpose power amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1.5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 75 W |
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