2N1488
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology presents the 2N1488, an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This component features a 55V collector-emitter breakdown voltage and a maximum continuous collector current of 6A, with a power dissipation capability of 75W. The 2N1488 is housed in a TO-204AD (TO-3) package, facilitating through-hole mounting. Key electrical specifications include a minimum DC current gain (hFE) of 15 at 1.5A and 4V, and a collector cutoff current (ICBO) of 25µA. The saturation voltage (Vce(sat)) is a maximum of 3V at 300mA base current and 1.5A collector current. Operating temperature ranges from -65°C to 200°C. This device is suitable for use in industrial power control and medium-power amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1.5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 75 W |
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