2N1487
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N1487 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector current capability of up to 6 A and can dissipate a maximum power of 75 W. It features a collector-emitter breakdown voltage of 40 V and exhibits a minimum DC current gain (hFE) of 15 at 1.5 A and 4 V. The saturation voltage (Vce Sat) is specified at a maximum of 3 V for an operating point of 300 mA base current and 1.5 A collector current. The 2N1487 is suitable for use in power switching and amplification circuits across various industrial sectors. Operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1.5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 75 W |
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