2C3439
TRANS NPN 350V 1A DIEManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3439 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This discrete device offers a high collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A. It features a maximum saturation voltage of 500mV at 4mA base current and 50mA collector current, with a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. The device exhibits a low collector cutoff current of 20µA (max). The 2N3439 is supplied as a die, packaged in Tape & Reel (TR), and operates across a wide temperature range of -65°C to 200°C. This component is suitable for use in power supply circuits, switching applications, and general-purpose amplification in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
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