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ICPB2002-1-110I

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ICPB2002-1-110I

DC-12 GHZ 12W DISCRETE GAN HEMT

Manufacturer: Microchip Technology

Categories: RF FETs, MOSFETs

Quality Control: Learn More

RF Mosfet 28 V 125 mA 12GHz 10dB 12W Die

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDie
Current Rating (Amps)1A
Mounting TypeSurface Mount
Frequency12GHz
Configuration-
Power - Output12W
Gain10dB
TechnologyGaN HEMT
Noise Figure-
Supplier Device PackageDie
Voltage - Rated28 V
Voltage - Test28 V
Current - Test125 mA

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