ICPB1010-1-110I
DC-14 GHZ 50W DISCRETE GAN HEMTManufacturer: Microchip Technology
Categories: RF FETs, MOSFETs
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Microchip Technology's ICPB1010-1-110I is a discrete Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-frequency applications up to 14 GHz. This component delivers 50W of output power at a 28V drain-source voltage, with a typical current rating of 4A and a test current of 500 mA. Featuring 6.1dB of gain, this surface mount device is packaged as a die, suitable for demanding RF power amplification in base stations, radar systems, and electronic warfare applications. Its GaN HEMT technology provides superior performance characteristics for high-power, high-frequency operation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Die |
| Current Rating (Amps) | 4A |
| Mounting Type | Surface Mount |
| Frequency | 14GHz |
| Configuration | - |
| Power - Output | 50W |
| Gain | 6.1dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | Die |
| Voltage - Rated | 28 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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