ICPB1005-1-110I
DC-14 GHZ 25W DISCRETE GAN HEMTManufacturer: Microchip Technology
Categories: RF FETs, MOSFETs
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Microchip Technology's ICPB1005-1-110I is a discrete Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-frequency applications. Operating up to 14 GHz, this device delivers 25W of output power with a typical gain of 6.4 dB at a drain voltage of 28V. The current rating for testing is 250 mA, with an overall current rating of 2A. This surface mount component, supplied as a die, utilizes GaN HEMT technology, making it suitable for demanding RF power amplification in sectors such as telecommunications, radar, and electronic warfare systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Die |
| Current Rating (Amps) | 2A |
| Mounting Type | Surface Mount |
| Frequency | 14GHz |
| Configuration | - |
| Power - Output | 25W |
| Gain | 6.4dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | Die |
| Voltage - Rated | 28 V |
| Voltage - Test | 28 V |
| Current - Test | 250 mA |
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