MS8151-P2613
GAAS SCHOTTKY NON HERMETIC FLIPManufacturer: Microchip Technology
Categories: RF Diodes
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Microchip Technology MS8151-P2613 is a GaAs Schottky diode, single, non-hermetic flip chip. This component is designed for high-frequency applications with a maximum reverse voltage of 3V and a forward current rating of 15 mA. It features a low junction capacitance of 60 fF at 0V and 1 MHz, and a low forward resistance of 9 Ohms at 10 mA and 100 MHz. The operating temperature range is -55°C to 125°C. This die-level device, supplied in tray packaging, is suitable for use in RF switching and detector circuits within telecommunications and defense industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Diode Type | Schottky - Single |
| Operating Temperature | -55°C ~ 125°C |
| Capacitance @ Vr, F | 60fF @ 0V, 1MHz |
| Resistance @ If, F | 9Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 3V |
| Supplier Device Package | Chip |
| Current - Max | 15 mA |
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