MG1021-M16
GAAS GUNN EPI DOWN HERMETIC STUDManufacturer: Microchip Technology
Categories: RF Diodes
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Microchip Technology's MG1021-M16 is a hermetically sealed GaAs Gunn Epitaxial Diode designed for demanding RF applications. This single PIN diode features a maximum reverse voltage of 4V and can handle a continuous current of up to 800 mA, with a maximum power dissipation of 50 mW. Its stud package facilitates efficient thermal management in high-frequency circuits. The MG1021-M16 is suitable for use in radar systems, microwave communication, and electronic warfare applications where robust performance and reliability are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | Stud |
| Diode Type | PIN - Single |
| Operating Temperature | - |
| Capacitance @ Vr, F | - |
| Resistance @ If, F | - |
| Voltage - Peak Reverse (Max) | 4V |
| Supplier Device Package | - |
| Current - Max | 800 mA |
| Power Dissipation (Max) | 50 mW |
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