MG1010-M11
GAAS GUNN EPI DOWN HERMETIC PILLManufacturer: Microchip Technology
Categories: RF Diodes
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Microchip Technology's MG1010-M11 is a hermetically sealed, GaAS Gunn epitaxial diode designed for high-frequency applications. This single PIN diode features a maximum reverse voltage of 8V and can handle a continuous forward current of up to 800 mA, with a power dissipation capability of 100 mW. Its robust construction and performance characteristics make it suitable for demanding RF and microwave systems. Applications include power amplification, oscillation, and switching circuits within telecommunications infrastructure and radar systems. The component is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Stud |
| Diode Type | PIN - Single |
| Operating Temperature | - |
| Capacitance @ Vr, F | - |
| Resistance @ If, F | - |
| Voltage - Peak Reverse (Max) | 8V |
| Supplier Device Package | - |
| Current - Max | 800 mA |
| Power Dissipation (Max) | 100 mW |
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