MX2N5116UB/TR
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
Quality Control: Learn More
The Microchip Technology MX2N5116UB-TR is a P-Channel JFET designed for demanding applications. This surface mount component, packaged in UB (3-SMD, No Lead) on tape and reel, features a drain-to-source voltage (Vdss) of 30V and a maximum power dissipation of 500 mW. It exhibits a typical gate-source cutoff voltage (Vgs off) of 1V at 1 nA and a drain current (Idss) of 5 mA at 15V. With an on-resistance (Rds(on)) of 175 Ohms and an input capacitance (Ciss) of 27pF at 15V, this device is suitable for high-frequency switching and amplification circuits. Operating across a wide temperature range of -65°C to 200°C, the MX2N5116UB-TR is qualified to MIL-PRF-19500, indicating its suitability for military and aerospace applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 175 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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